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Impurity Profiles for Diffusion in Common Semiconductors



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Select a semiconductor:
Silicon (Si)
Germanium (Ge)
Aluminum Antimonide (AlSb)
Gallium Arsenide (GaAs)
Gallium Phosphide (GaP)
Gallium Antimonide (GaSb)
Indium Arsenide (InAs)
Indium Phosphide (InP)
Indium Antimonide (InSb)
Select a dopant:
Boron (B)
Aluminum (Al)
Gallium (Ga)
Indium (In)
Phosphorus (P)
Arsenic (As)
Antimony (Sb)
Bismuth (Bi)
Copper (Cu)
Lithium (Li)
Sodium (Na)
Potassium (K)
Hydrogen (H)
Helium (He)

Select a profile:
Constant-Surface Constant-Total-Dopant

Enter the surface concentration: [cm-3]

Enter the annealing temperature: [°C] (900 to 1350)

Enter the annealing time: [min] (1 to 600)

Enter the substrate depth: [µm] (0 to 10)

the impurity concentration at the specified substrate depth [cm-3]

Impurity Concentration
vs. Substrate Depth
for above Parameters

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