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Impact Ionization or Ionization Breakdown Gain and Coefficient Calculator


Semiconductor Type: Silicon (E-field Range: 0 - 316200 V/cm)
Indium Phosphide (E-field Range: 350000 - 466900 V/cm)
       Gallium Arsenide:
        Low Doping (E-field Range: 200000 - 326400 V/cm)
        Medium Doping (E-field Range: 200000 - 325100 V/cm)
        High Doping (E-field Range: 200000 - 333600 V/cm)

Voltage: (V)
Width: (μm)

a : (cm-1)
b : (cm-1)
Me, electron gain:
Mh, hole gain:
Electric Field: (V/cm)




References:

Silicon:
P.P. Webb, Measurements of Ionization Coefficients in Silicon at Low Electric Fields, GE Canada Inc., Electro Optics Operations
W.N. Grant, Solid State Electronics, 16, 1189 (1973)

Indium Phosphide:
C. A. Armiento and S. H. Groves, Applied Physics Letters, Vol 43, No. 2

Gallium Arsenide:
H. David Law and Charles A. Lee, Solid-State Electronics, Vol. 21, pp. 331-340
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