Search BYU 
Home   |   Contact
Navigation Menu

[expand all...]

Substrate Cleaning

Expand All
Compress All
  1. Simple Clean
    1. Removes organic contaminants
    2. Process
      1. Cover the surface of the wafer with Acetone.
      2. Thoroughly scrub the surface of the wafer with a swab.
      3. Rinse the wafer with IPA.
      4. Blow dry the wafer with N2 gun.
  2. Photoresist Stripper
  3. O2 Plasma Etching
    1. O2 plasma etching will remove organic films and residues. O2 plasma etching can be done in the PE2 or the Branson.
    2. Link to PE2
  4. RCA Clean
    1. Removes organic, oxide, and metallic contaminants
    2. Process
      1. Organic Clean: Removal of insoluble organic contaminants with a 5:1:1 H2O:H2O2:NH4OH solution.
      2. Oxide Strip: Removal of a thin silicon dioxide layer where metallic contaminants may accumulated as a result of (I), using a diluted 20:1 H2O:HF solution.
      3. Ionic Clean: Removal of ionic and heavy metal atomic contaminants using a solution of 6:1:1 H2O:H2O2: HCl.
  5. Piranha Clean
    1. Removes organic materials (photoresist, oil, etc.)
    2. WARNINGS: Do not use Piranha clean on aluminum
    3. Process
      1. Mix 98% H2SO4 (sulfuric acid) and 30% H2O2 (hydrogen peroxide) in volume ratios of 2-4:1
      2. Heat to 100°C

Maintained by ECEn IMMERSE Web Team.
Copyright © 1994-2009. Brigham Young University. All Rights Reserved.