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Photolithography Chemicals and Materials

This page gives data for the best known processing methods for various adhesion promoters
and photoresists. The methods correspond to a specific use for each photoresist, which can
be found be clicking on the photoresist name.

The photolithography process can be changed to create different features.

List of Photoresists & Manufacturers

Tables of Spin Speed vs Thickness

Basic Photolithography Process for Positive Photoresists

Basic Photolithography Process for Negative Photoresists

Basic Lithography Tutorial

Positive Photoresist Spin Speed/TimeThicknessSoftbake Temp/TimeExposure Time (assuming 10mW/cm2)DeveloperDevelop TimePost-Exposure Bake Temp/TimeMinimum Feature Size
AZ 3312 4000rpm/60s 1um 90° C/60s 4-5s AZ300MIF 30-40s 90° C/60s 0.5um
AZ 3330 5000-6000rpm/60s 2um 90° C/60s 8-12s AZ300MIF 30-40s 90° C/60s 1um
Shipley 1.2L 4000rpm/70s 1um 90° C/60s 5-6s Shipley MF-26A30-40s 115° C/60s 0.5um
Shipley 1.8M 4000rpm/90s 2um 90° C/60s 10-11s Shipley MF-26A30-40s 115° C/60s 1um
AZ P4620 200rpm/30s,
6000/2s
Clean off back of wafer
9um 70° C/60s,
100° C/4min
60s (soft contact else resist will crack) AZ400K (diluted 1:4, agitate)2min (repeat exposure/develop steps as many times as necessary) 70° C/5min,
90° C/5min,
110° C/10min
-
*Note: No change in exposure time has been observed when using the south aligner with the new filters.

Negative PhotoresistSpin Speed/TimeThicknessSoftbake Temp/TimeExposure Time (assuming 10mW/cm2)Post-Exposure Bake Temp/TimeDeveloperDevelop TimeMinimum Feature Size
nLOF 2020 2750rpm/60s 2um 110° C/60s 7-8s 110° C/60s AZ300MIF 60s 1um


PhotodefinablesSpin SpeedThicknessSoftbake Temp/TimeExposure Time (assuming 10mW/cm2)Post-Exposure Bake Temp/TimeDeveloperDevelop TimeCuring Temp/TimeTypeAsect Ratio
Note: After developing the SU-8, rinse the wafer off with isopropyl alcohol, NOT water!
SU-8 5Variable 1000 - 60006um - 2um50° C/5min,
65° C/5min,
95° C/5min
20-25s65° C/5min,
95° C/5min
SU-8 Developer, gently agitate 50s
Very sensitive to concentration of developer
250C in vacuum (will burn away at atm.)
negative
-
SU-8 10Variable 1000 - 600015um - 3um65° C/10min,
95° C/10min
25-40s65° C/10min,
95° C/10min
SU-8 Developer, gently agitate 90s
Very sensitive to concentration of developer
250C in vacuum (will burn away at atm.)
negative
-
SU-8 25Variable 1000 - 600030um - 5um50° C/5min,
65° C/5min,
95° C/5min
1min - 45s65° C/5min,
95° C/5min
SU-8 Developer, gently agitate4-2 mins
Very sensitive to concentration of developer
250C in vacuum (will burn away at atm.)
negative
-
SU-8 3005Variable 750 - 500011um - 3um65° C/5min,
95° C/5min
20-25s65° C/5min,
95° C/5min
SU-8 Developer, gently agitate 50s
Very sensitive to concentration of developer
250C in vacuum (will burn away at atm.)
negative
5:1
SU-8 2000.5Variable 3000/30s600nm65° C/1min,
95° C/3min
6s65° C/1min,
95° C/4min
SU-8 Developer, gently agitate 50s
Very sensitive to concentration of developer
250C in vacuum (will burn away at atm.)
negative
>10:1
PMGI 500/10s,
1000/30s,
6000/1s
~5um65° C/1min,
250° C/20min
(Note: Ramp Down)
210s (Deep UV)
60 develop
Repeat until desired removal
-AZ300 MIF (repeated)
(Very sensitive to over-development)
60s
120C/60s
positive
-
*Note: Exposure times for SU8 have increased by about 40% when using the south aligner with the new filters.

Polyimide / Spin-On-GlassSpin SpeedThicknessSoftbake Temp/TimeExposure Time (assuming 10mW/cm2)Post-Exposure Bake Temp/TimeDeveloperDevelop TimeCuring Temp/TimeTypeMinimum Feature Size
Honeywell 1513EL4000 rpm1.5um
-
-
-
-
-
200C
-
-


Adhesion PromoterProcess
HMDSSpin@2000rpm 3-5s or until spread; apply before photoresist
Omni-CoatApply, then spin wafer @ 3000 RPM for 20sec; apply before SU-8
Surpass 3000
Surpass 4000


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