Select a semiconductor substrate and a doping profile below.
The depletion layer width, built-in voltage, maximum field,
and depletion capacitance will be displayed in the appropriate boxes.
Select a Semiconductor:
Select a doping profile:
Silicon
Gallium Arsenide
Germanium
Abrupt
Linearly-Graded
Input the necessary parameters:
NA:
cm-3
ND:
cm-3
Temp:
Kelvin
Applied Voltage:
Volts
The abrupt junction is one where the doping is constant on both sides of the junction
and changes instantly at the junction. These can't really be made, but they are frequently found in
students' homework ;-)
A subset of the abrupt junction is the one-sided abrupt junction, which can also be calculated here.
If you don't know the doping on the heavily-doped side of a one-sided junction, just enter something
very large like 1e20.
Doping gradient:
cm-4
Temp:
Kelvin
Applied Voltage:
Volts
The doping gradient is the rate of change of the doping concentration.
A value of 1e20 cm-4 means at x=0 the doping is 0 cm-3,
and at x=1um (10-4 cm), the doping is 1016 cm-3.
The doping gradient is presumed constant throughout the depletion region.
