Useful information related to semiconductor wafers, resistivity, mobility, impurity doping (diffusion, ion implantation, ion implantation houses), oxide growth, crystal planes, silicon dioxide and nitride films, chemical etching, optoelectronics, contact resistance, and much more!
Calculators & Interactive Graphs
Enter the Miller indicies of any two crystal planes to determine the angle between them.
Given an electric field, you can calculate the Breakdown Coefficients along with the gain in Silicon, Indium Phosphide, and Gallium Arsenide semiconductors.
Calculates energy barrier height and depletion layer width for any combination of over 70 metals and 8 semiconductors.
Calculates and plots Drain Current of a MOSFET as a function of Drain Voltage of the MOSFET. Also includes background information on MOSFETs.
Calculate the Optical Absorption coefficient for Silicon, InP, GaAs, and Ge using a known wavelength.
Calculates depletion layer width, built-in voltage, maximum field, and depletion capacitance for pn junctions in 4 different semiconductors
and with 2 different doping profiles.
Calculate the mobility and resistivity of silicon for different doping concentrations of Arsenic, Boron, and Phosphorous. Interactive graph plots resistivity vs. impurity concentration for selected dopants.
A reference to electromagnetic, atomic, physico-chemical, x-ray and general physical constants. The
constant values listed are the CODATA 2003 recommended values accepted by the National Institute of Standards
A simple guide to understanding the sizes used in the BYU cleanroom.
This table shows the CTE for various common semiconductor materials.
Instructions on how to measure metal-semiconductor contact resistance using the transmission line method (TLM).
This table shows the Resistivities of several common metals at 20 degrees Celsius.
This table shows thermal properties for various metals.