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Transene Company, INC.

www.transene.com
Other Chemcial Etching Companies

This page displays information on chemical etchants for various thin films used in semiconductor devices.


For more information on products, recommended photoresist types, applications and compatibility charts please visit Transene.
Film Type Etchants Range
Al Aluminum Etchants
TYPE A
TYPE D
at 25C, at 40C
30 /sec, 40 /sec
80 /sec, 125 /sec
Al2O3 Transetch - N 120 /sec at 180C
Cr Chromium Etch-473
Chromium Etch-TFD
Chromium Etch-1020
at 25C, at 40C
14 /sec, 25 /sec
--, 50 /sec
Cr-CrO Chromium Etch-TFD
Chromium Etch-1020
Variable
Variable
Cr-Si
Cr-SiO
Chromium Cermet
Etchant - TFE
1000 /min at 50C
Cu Copper Etch 100
Copper Etch 200
APS Copper 100
1 mil/min at 50C
.5 mil/min at 50C
80 /sec at 40C
GaAs Gallium Arsenide 20 /sec to 100 /sec
GaN Gallium Nitride 80 /min at 180C
Ga2O3 Gallium Oxide 10 SEC. at 25C
GaP Gallium Phosphide A Face(Ga): 115 /hr
B Face (P): 210 /hr,80C
Ge Germanium 250 /sec at 20C
Au Gold Etchant TFA 28 /sec at 25C
In2O3 Indium Oxide 30 min at 25C
InP Indium Phosphide 30 mins at 25C
Fe2O3 Iron Oxide ME-10 50 /sec at 25C
Mo Moly Etchant 55 /sec at 30C
85 /sec at 60C
Nb Niobium 50 /sec at 25C
Ni-Cr Nichrome Etch - TFC
NIckel Etch TFN
20 /sec at 25C
50 /sec at 40C
Ni Nickel Etch - TFB
NIckel Etch TFG
30 /sec at 25C
50 /sec at 40C
Pd Palladium Etchant - TFP 110 /sec at 50C
Pt Platinum Etch 1:1 10 /sec at 25C
Si Silicon Slow Etch
Silicon Mesa Etch
Variable
Variable
SiO2 Buffer HF (thermally grown)
Siloxide Etch (deposited)
800 /min at 25C
2400 /min at 25C
SiO Silicon Monoxide Etch 5000 /min at 85C
Si3N4 Transetch - N 125 /min at 180C
Ag Silver Etchant - TFS 200 /sec at 25C
Ta Tantalum Etch SIE-8607 70 /sec at 25C
Ti Titanium Etchant - TFT 25 /sec at 20C
50 /sec at 30C
Ti-W Ti-Tungsten Etch TiW-30 20 /sec
W Tungsten Etch TFW 140 /sec at 30C
SnO, ITO TE-100 30 MIN at 25C



Other Chemical Etching Companies


Avantor Performance Materials(formerly Mallinckrodt Baker)

Honeywell Electronic Materials

Cyantek



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