Energy Gap in III-V Ternary Semiconductors
Equations used to calculate Direct Energy Gap
AlxIn1-xP | 1.34 + 2.23x |
AlxGa1-xAs | 1.424 + 1.247 (x<0.45) 1.424 + 1.087x + 0.438x2 |
AlxIn1-xAs | 0.36 + 2.35x + 0.24x2 |
AlxGa1-xSb | 0.73 + 1.10x + 0.47x2 |
AlxIn1-xSb | 0.172 + 1.621x + 0.43x2 |
GaxIn1-xP | 1.34 + 0.511x + 0.6043x2 (0.49<x<0.55, VPE layer) |
GaxIn1-xAs | 0.356 + 0.7x + 0.4x2 |
GaxIn1-xSb | 0.172 + 0.165x + 0.413x2 |
GaPxAs1-x | 1.424 + 1.172x + 0.186x2 |
GaAsxSb1-x | 0.73 - 0.5x + 1.2x2 |
InPxAs1-x | 0.356 + 0.675x + 0.32x2 |
InAsxSb1-x | 0.18 - 0.41x + 0.58x2 |
Source: Swaminathan, V; Macrander, A. T.; Materials Aspects of GaAs and InP based Structures. 1991. |