Denton Vacuum E-beam Evaporator
|Denton Vacuum - Quality, Service, Value
1259 North Church St.
Moorestown, NJ, USA 08057
Faculty Contact: Aaron Hawkins
Staff Contact: Joe Bussio
Student Contact: Grant Stagg
- All depositions must be approved by Dr. Hawkins
- Do NOT deposit anything containing iron. The only materials that can be deposited are Ni, SiO2, Al, Au, Cr, Ti, SnO2, Ge
- Never operate the high vacuum (TURBO) pump without the roughing (MECH) pump being on
The Denton Vacuum E-beam Evaporator is primarily used to deposit metal on silicon wafers. For these depositions to occur, >the wafer and material to be deposited must first be brought to a very low pressure (high vacuum). This vacuum >is usually in the range of 1x10-5 torr. The material to be deposited must be capable of vaporizing > for the deposition to be successful. Once at a high vacuum, an electron beam is >focused on the crucible containing the deposition material until the material begins to evaporate. As the material > in the crucible evaporates, its vapor will begin to coat the inside surface of the chamber. The Inficon Deposition > Meter utilizes a quartz crystal monitor to accurately display the thickness and rate of the deposition. Also, a > shutter is used to block the electron beam from hitting the deposition material until everything is ready for the deposition.
LCD Touch-screen / Inficon Deposition Monitor / Sightglass and Mirror Stand / Chiller
- Ensure that the Roughing, High Vac, and Vent valves are all off.
- Vent the chamber.
- Load the substrate.
- Load the evaporation material.
- Check the mirrors.
- Check the crystal life.
- Close the vent valve.
- Turn on the Mechanical Pump.
- Open the Roughing Valve.
Wait for 6 minutes, and prepare the chamber for evaporation.
- Close the Shutter.
- Start rotation.
Program the crystal monitor:
- Tooling factor 1.
- Tooling factor 2.
- Close the Roughing Valve.
Open the High-Vac valve.
- Double check the pressure and valves on the intermediate screen before confirming that the valve should be opened.
- Turn on the ion gauge.
- Wait for CHAMBER IG to read 5.5 E-5.
- Turn on the temporary workaround switch
- Turn on the e beam power supply and beam controller
- Start the crystal monitor, and zero the display.
- Turn on Voltage then turn on the Emission and ramp the current to the desired level.
- Ramp the current at a rate of 4 seconds per 10 tick-marks on the dial.
- Open the shutter, and monitor the deposition.
- Close the shutter when the desired thickness has been reached.
- Ramp the current back down to zero, and turn off the Voltage/Emission.
- Wait 5-10 minutes for the system to cool.
- Close the High-Vac valve.
- Wait for CHAMBER IG to read 1.0 E-4.
- Turn off the temporary workaround switch
- Turn off the ion gauge.
- Turn off the Mech Pump.
- Turn on the Vent valve.
- Unload the substrate and material.
- Vacuum the chamber for 6 minutes.
- Shut off the crystal monitor, e-beam power supply, close the Roughing valve, and shut off the Mech Pump.